摘要
利用无水三氯化铝与叠氮化钠在无溶剂的条件下直接反应,成功地合成出六方单晶氮化铝(h-Al N)薄膜.反应温度为450℃,有效反应时间为20 h.高分辨率透射电镜发现为薄膜形态;电子衍射和X射线衍射结果都表明,氮化铝薄膜为六方结构.光致发光实验显示,在可见光范围内有一较强的辐射峰,中心位于413 nm处,半高宽约为5 nm.同时,本文对六方单晶氮化铝薄膜的生长机理和光致发光机理也进行了讨论.
A pure hexagonal aluminum nitride （h-AIN） film is synthesized through the direct reaction of AICI3 with NaN3 in a non-solvent system at Iow temperatures of 450℃ for about 20 hours. The h-AIN film is characterized hy the high-resolution transmission electron microscope electron diffraction, and X-ray diffraction. The analysis shows that the film is of pure monocrystal hexagonal structure,PL spectra indicate thai it has a relatively strong emission peak in visible region, centered at 413 nm, the full, width at half maximum （FWHM） of the emission peak is 5nm. In addition, a possible growth and photolumineseence mechanism for h-AIN film is discussed.
出处
《光子学报》
EI
CAS
CSCD
北大核心
2007年第9期1687-1690,共4页
Acta Photonica Sinica
基金
国家自然科学基金(10474078)
陕西省教育厅科学基金资助
