摘要
使用改进的常压化学气相沉积 (APCVD)系统制备了非晶硅薄膜 ,测量了样品的光致发光特性 ,使用Raman光谱和X射线光电子能谱 (XPS)谱测量了薄膜的微结构特征。样品在 5 2 3nm出现发光峰 ,Raman光谱和XPS谱表明制备的薄膜结构中存在富氧相和富硅相的分相现象 ,分析认为相界面的存在是产生发光的原因。Raman光谱分峰结果表明薄膜中存在纳米晶粒。
Amorphous Si films were grown by atmospheric pressure chemical vapor deposition (APCVD).Its microstructures and optical properties were characterized with p hoto-luminescence (PL) spectroscopy.Raman and X-ray photoelectron spectroscopy (XPS).A green luminescence peak at 523 nm was observed.Raman and XPS spectra sh ow that the films display Si-rich and O-rich phases.We suggest that the phase interfaces result in the luminescence.Data fitting of Raman spectra indicates th at Si nano-crystalline grains are embedded in the films.
出处
《真空科学与技术学报》
EI
CAS
CSCD
北大核心
2004年第6期469-471,共3页
Chinese Journal of Vacuum Science and Technology
基金
国家高技术研究发展计划资助 (No.2 0 0 1AA3 2 0 2 0 2 )
