摘要
Zr B2薄膜作为可燃中子毒物在反应堆上得以应用。本研究采用磁控溅射的方法在Si(111)和UO2芯块表面制备了Zr B2薄膜。利用扫描电镜(SEM)对薄膜的表面与截面形貌进行了观察,利用X射线衍射(XRD)仪、X射线能谱(EDS)、X射线光电子谱(XPS)对薄膜的物相及成分进行了表征,采用热循环以及划痕法对膜层与基体的结合性能进行考核。结果表明,所制备的薄膜为Zr B2薄膜且膜层较为纯净,基本只含有Zr和B 2种元素;Zr B2膜层和UO2基体结合性能良好,膜层生长致密均匀;膜层破坏的临界载荷约为455 m N。
Zr B2 thin films are used as neutron burnable absorbers of nuclear reactor. In this paper, Zr B2 thin films were prepared on surfaces of Si（111） and UO2 fuel elements by magnetron sputtering. The microstructures of films were observed with scanning electron microscope（SEM）. The phase constituents and compositions of Zr B2 films were analyzed by X-ray diffraction（XRD）, X-ray energy dispersion spectroscope（EDS） and X-ray Photoelectron Spectroscopy（XPS）. This paper has focused its efforts on the adherence quality through thermal shock and nano scratch tests. Results show that films with dense growth deposited on Si（111） and UO2 substrates are uniform and well adhered to the substrates. The films are consisted of pure Zr B2, and only Zr and B elements are detected. The critical load of films is about 455 m N.
出处
《稀有金属材料与工程》
SCIE
EI
CAS
CSCD
北大核心
2015年第3期723-726,共4页
Rare Metal Materials and Engineering
关键词
二硼化锆
磁控溅射
薄膜
zirconium diboride
magnetron sputtering
thin films
