摘要
针对超声波雾化施液化学机械抛光过程中磨料的机械作用和化学特性从化学动力学及分子动力学两方面研究了抛光液磨料粒度对材料去除速率的影响和机理。采用不同粒度的磨料及组合进行了雾化施液CMP抛光实验。实验结果表明:磨料粒径在15 nm至30 nm范围内,粒度比较大的磨料能够传递更多的机械能,较小的磨料比较大的磨料具有更强的化学活性,对硅片表面材料的去除影响更为显著。向当前抛光液中加入5wt%的15 nm SiO2时,材料去除率增加至196.822 nm/min,而加入相同质量的30 nm SiO2时,材料去除率增加至191.828 nm/min。说明小尺寸的磨料在雾化施液CMP过程中不仅起着机械作用,还起着增强化学活性的作用。
From the aspects of chemical kinetics and molecular dynamics,the effects and mechanism of particle sizes on removal rate in atomization chemical mechanical polishing,which is specific to the mechanical impact and chemical characteristics of abrasives,were discussed. Experiments on particle sizes show that larger abrasives,sizes between 15 nm to 30 nm,can transmit more mechanical energy than the smaller ones do,while the smaller abrasives has better chemical activity,which have more significant influences on silicon wafer surface material removal. When adding 5wt% 15 nm SiO2 into the slurry that has mixed abrasives,MRR increases to 196. 822 nm /min,while it increases to 191. 828 nm /min when adding the same quantity of 30 nm SiO2 into the same kind of slurry. These experimental results indicate that small abrasives have not only mechanical actions but also chemical activity.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2014年第7期1729-1733,1743,共6页
Journal of Synthetic Crystals
基金
国家自然科学基金(51175228)
