期刊文献+

硒化锌晶体精细雾化抛光液及去除机理研究 被引量:3

Zinc Selenide Crystal Polishing Slurry and Removal Mechanism in Fine Atomization CMP
下载PDF
导出
摘要 目的配制适合硒化锌雾化施液化学机械抛光的最优抛光液。方法选取氧化铝磨粒、pH调节剂四甲基氢氧化铵、氧化剂过氧化氢、表面活性剂聚乙烯吡咯烷酮为主要活性成分,以材料去除速率和表面粗糙度为评价指标,通过正交试验对硒化锌晶体进行精细雾化抛光,分析材料去除机理,并与传统抛光对比。结果氧化铝质量分数为9%、pH值为11、过氧化氢含量为3.5%、聚乙烯吡咯烷酮含量为0.75%时,材料去除率较高,为923.67 nm/min,同时表面粗糙度较小,为2.13 nm。在相同工况条件下,传统抛光材料的去除率和表面粗糙度分别为965.53 nm/min和2.27 nm。结论抛光液各组分对试验结果影响最大的为氧化铝磨粒,然后依次为氧化剂、pH值、表面活性剂。精细雾化抛光效果与传统抛光相近,但抛光液用量仅为后者的1/8。 The work aims to prepare optimum slurry for ultrasound fine atomization chemical mechanical polishing(CMP) of zinc selenide. With alumina abrasive, pH value regulator tetramethyl ammonium hydroxide, oxidant hydrogen peroxide and surfactant polyvinylpyrrolidone as main active ingredients, fine atomization CMP of Zn Se was carried out, and removal mechanism was analyzed through orthogonal experiment by taking material removal rate(MRR) and surface roughness(Ra) as assessment indicators. Then the experimental results were compared with those of traditional polishing. Provided that mass fraction of alumina was 9%, pH value was 11, hydrogen peroxide was 3.5% and polyvinylpyrrolidone content was 0.75%, the material removal rate was up to 923.67 nm/min and surface roughness was merely 2.13 nm. Under the same working conditions, the material removal rate and surface roughness of traditional polishing material was 965.53 nm/min and 2.27 nm, respectively. Among all constituents of the polishing slurry, alumina abrasive has the most influence on test results, followed by oxidant, pH value and surfactant. The effect of fine atomization polishing is similar to that of traditional polishing, but the consumed quantity of polishing slurry is only 1/8 of the latter.
作者 李庆忠 施卫彬 夏明光 LI Qing-zhong;SHI Wei-bin;XIA Ming-guang(School of Mechanical Engineering, Jiangnan University, Wuxi 214122, China)
出处 《表面技术》 EI CAS CSCD 北大核心 2018年第6期271-276,共6页 Surface Technology
基金 国家自然科学基金项目(51175228)~~
关键词 化学机械抛光 硒化锌 去除机理 精细雾化 正交试验 抛光液 chemical mechanical polishing zinc selenide removal mechanism fine atomization orthogonal experiment polishing slurry
  • 相关文献

参考文献12

二级参考文献138

共引文献176

同被引文献20

引证文献3

二级引证文献11

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部