摘要
本文报道了用离化原子团束（ＩＣＢ）技术在ＧａＡｓ（１００）上外延ＺｎＳｅ单晶薄膜的研究结果。采用单源喷发并用电子能谱分析了外延薄膜的成分。用互光衍射和ＲＨＥＥＤ研究了外延ＺｎＳｅ单晶薄膜结构和外延质量。得到了摆动曲线半高宽为１３３＂，并具有原子水平平整程度的ＺｎＳｅ（１００）单晶薄膜。
Study on epitaxy of ZnSe single crystal films on GaAs (100) with ionized cluster beam deposition technique is reported. A single evaporating source is used in deposition. SEM, XRD and RHEED are used to analyze the epilayer of ZnSe single crystal. A single crystal ZnSe film with atom-flatness is obtained, of which the FWHM of XRD rocking curve is 133 seconds.
出处
《清华大学学报（自然科学版）》
EI
CAS
CSCD
北大核心
1994年第6期96-99,共4页
Journal of Tsinghua University(Science and Technology)
