摘要
采用微电子平面工艺 ,高真空电子束蒸发金属Ni作肖特基接触 ,多层金属Ni、Ti、Ag合金作欧姆接触 ,SiO2 绝缘环隔离减小高压电场集边效应等技术 ,制作出Ni/4H SiC肖特基势垒二极管 (SBD) .该器件在室温下反向击穿电压大于 450V ,对应漏电流为 6× 1 0 -6 A .并对实验结果进行分析模拟 ,理想因子为 1 .73 ,肖特基势垒高度为 1 .2 5V ,实验表明 ,该器件具有较好的正向整流特性和较小的反向漏电流 .
With microelectronics plane technology, the electron beam evaporation is used to deposit metal Ni to form the Schottky contact and alloys Ni, Ti, Ag to form ohmic contact in high vacuum ambient, and grow silicon oxide insulating ring around the periphery of the diodes to reduce the electric filed crowding at the diode edges. The experimentally obtained values of breakdown voltage for Ni/4H-SiC Schottky diodes have been found to be higher than 450V, and the leakage current is 6×10 -6 A. The measurements of the I-V characteristics of these diodes have been analyzed and simulated and the ideality factor has been found at 1.73 and the Schottky barrier height at 1.25 V. The diodes show good rectifier property and a low leakage current.
基金
国家自然科学基金资助项目 (5D132 0 40 )
