摘要
采用本实验室生长的4H-SiC外延片,分别用高真空电子束蒸Ni和Ti做肖特基接触金属,Ni合金作欧姆接触,SiO_2绝缘环隔离减小高压电场集边效应等技术,制作出4H-SiC肖特基势垒二极管(SBD)。该器件在室温下反向击穿电压大于600 V,对应的漏电流为2.00×10^(-6)A。对实验结果分析显示,采用Ni和Ti作肖特基势垒的器件的理想因子分别为1.18和1.52,肖特基势垒高度为1.54 eV和1.00 eV。实验表明,该器件具有较好的正向整流特性。
4H-SiC epitaxial wafers were grown using a hot-wall CVD reactor. Electron beam evaporation technique was used to deposit Ni or Ti to form Schottky contact. Ni was deposited and annealed to form ohmic contact. Insulating silicon oxide was grown by LPCVD around the per.iphery of the diodes to reduce the electric field crowding at the diode edges. The breakdown voltage for Ni/4H-sic Schottky diodes has been found to be higher than 600V, and the leakage current is 2×10^-6 A. The I-V characteristics of these diodes using Ni and Ti have been analyzed, and the ideality factors of 1.18 and 1.52 and the Schottky barrier heights of 1.54 eV and 1.00 eV have been found, respectively. The diodes show good rectifying property.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2007年第4期464-467,共4页
Research & Progress of SSE
