摘要
在4H-SiC外延材料上制备了SBD和JBS器件,研究并分析了退火温度对这两种器件正反向特性的影响。结果表明,低于350℃退火可同时提高SBD和JBS的正反向特性。当退火温度高于350℃时,二者的正向特性都出现退化,SBD退化较JBS更为严重。JBS阻断电压随退火温度升高而增大,在退火温度高于450℃时增加趋势变缓。SBD阻断电压随退火温度升高先升后降,在500℃退火时达到一个最大值。可见一定程度的退火有助于提高4H-SiCSBD和JBS器件的正反向特性,但须考虑其对正反向特性的不同影响。综合而言,退火优化后JBS优于SBD器件性能。
4H-SiC Schottky-barrier diode（SBD）and junction barrier Schottky（JBS） were fabricated on 4H-SiC substrates,and the dependence of the forward and reverse characteristics of the two devices on the anneal temperature were investigated.The results show that the forward and reverse characteristics of 4H-SiC SBD and JBS can be improved after annealing when the annealing temperature is below 350 ℃.With annealing temperature beyond 350 ℃,both forward characteristicses of the two devices are degraded,and the degradation of SBD is worse than that of JBS.The breakdown voltage of JBS increases with increasing temperature and the increasing rate becomes slow down when the temperature is above 450 ℃.With increasing of the annealing temperature,the breakdown voltage of SBD ascends at first and then descends,which has a peak value after annealing at 500 ℃.It is obvious that the forward and reverse characteristics of 4H-SiC SBD and JBS can be improved by proper annealing,but a compromise between the different effects of the forward and reverse characteristics should be taken into account.In summary,JBS has better performance than SBD after annealing at optimal conditions.
出处
《微纳电子技术》
CAS
北大核心
2009年第7期433-436,共4页
Micronanoelectronic Technology
