摘要
在基于单电子晶体管的半经典理论和主方程模型的基础上,提出了一种采用非对称隧穿电容设计的单电子晶体管,并用计算机模拟了对称结构的单电子晶体管和非对称隧穿电容(电阻)结构单电子晶体管的特性.模拟结果表明,用主方程法模拟非对称隧穿电容(电阻)结构设计的晶体管,其伏安特性曲线除仍保留对称结构具有的周期性以外,还具有正弦态、电阻态、方波态、截止态四种形态.其性能也有差异.
After reviewing some intriguing literature regarding the orthodoxy theories, a new singleelectron transistor constructed by unsymmetrical tunneling capacitance was proposed. Through the masterequation methods, both the symmetry tunneling capacitance and asymmetric tunneling capacitance were simulated on the computer. The results indicate that the characteristic curve of the single-electron transistor based on asymmetric tunneling capacitance presented not only the periodicity in structure of symmetry tunneling capacitance but also four states： sine wave-state, resistance-state, pane-state as well as forbid-state, all with different capabilities.
关键词
单电子
主方程
隧穿电容
非对称性
single-electron
master-equation
tunneling capacitance
unsvmmetrv
