摘要
研究了用能量为 3 0keV～ 4 0keV ,束流为 80mA～ 2 0 0mA的低能氮和氩离子束对Ti膜进行轰击的作用以及用低能氮离子束对真空电弧沉积Ti -N膜层辅助沉积作用。结果表明 :用低能氮离子束对Ti膜进行轰击可以形成Ti2 N相 ,在 (2 0 4)晶面出现一定的择优取向 ,并对Ti膜层有一定的强化作用 ;在低能氮离子束对真空电弧辅助沉积过程中 ,膜层表现为较高的显微硬度 ;随低能离子束能量的增大 ,真空电弧沉积膜层中Ti2 N相增多 ,在 (0 0 2 )晶面出现择优取向 ,膜层晶粒有粗化的趋势 ,但显微硬度却增加 ,这与Hall-Petch公式不符。
Titanium film with the low - energy nitrogen and argon ion bombardment and titanium nitride thin films prepared by vacuum are deposition with low - energy nitrogen IBAD in the range of 3.0 similar to 4.0 keV were studied. The results showed that bombarding to titanium film with low - energy nitrogen ion beams, Ti2N phase with (204) preferential orientation can be formed, and strengthened titanium Films. The rams had high microhardness and low porosity during vacuum are plating with IBAD. Increasing energy of nitrogen ion beam, Ti2N phase with (002) preferential orientation grew in number. The grains of the film tended to coarsen while the microhardness increased, which was not consistent with the Hall - Petch formula.
出处
《稀有金属材料与工程》
SCIE
EI
CAS
CSCD
北大核心
2002年第3期175-178,共4页
Rare Metal Materials and Engineering
基金
广东省高教厅基金项目 (970 0 3 2 )
