摘要
用电离Ｎ＿２产生的离子束作为外延生长氮化物的Ｎ源已获得成功，在ＧａＡｓ（１００）衬底上长出了具有立方结晶的ＧａＮ薄膜，其（２００）ｘ射线衍射峰宽仅２３’。并用高分辨率电子能量损失谱测到立方ＧａＮ的表面光学声子出现在损失能量为８２ｍｅＶ处．
The ion beam producing ionization of N2 was successfully utilized as the N source for nitride growth. The cubic GaN thin films were thus grown on the GaAs(100) substrates. The width of the (200) X-ray diffraction peak of the epilayer is 23' only, and the high-resolution electron energy loss spectroscopy measurements show that the optical surface phonon of cubic GaN appears at the loss energy of 82 meV.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1994年第7期1123-1128,共6页
Acta Physica Sinica
基金
国家自然科学基金
关键词
氮化镓
外延生长
离子源
离子束
The ion beam producing ionization of N_2 has been successfully utilized as theN source for nitride growth.Cubic GaN thin films are thus grown on GaAs( 1 00)substrates.The width of the(200)X-ray diffraction peak of the epilayer is 23’only,and the high-res
