摘要
实验发现正偏压下的MOS电容受辐照引起的平带电压位移与SiO_2栅介质膜厚度的三次方成正比。实验结果说明辐照感生界面态在MOS电容的平带电压漂移中起重要作用。就抗辐照性能而言,采纳于氧氧化工艺的最佳温度匀1000℃;高于1000℃的氮气退火或氢介入Si-SiO_2界面都会严重降低MOS器件的抗辐照能力。辐照产生界面态的原因是在Si到SiO_2。过渡层中存在未电离的过剩硅。
It was found that radiation induced flatband voltage shift of MOS capacitors with positive gate bias is proportional to the third power of the SiO2 thickness. The experimental results indicate that radiation induced interface states play an important role in flatband voltage shift of MOS capacitors. It was discovered that in view of radiation hardness, 1000℃ is the best temperature for dry oxidation and that annealing at temperature above 1000℃ or hydrogen atoms coming into the Si-SiO2 interface will seriously degrade the radiation tolerance of MOS devices. It was supposed that radiation induced interface states mainly result from the existence of unionized excess silicon atoms in the Si-SiO2 transition layer.
出处
《核技术》
CAS
CSCD
北大核心
1991年第3期159-163,共5页
Nuclear Techniques
基金
国家自然科学基金
关键词
MOS电容
辐照
界面态
MOS capacitor Irradiation Interface state
