摘要
分析了MZOS结构及其Si—SiO_2子系统的C-V特性,发现ZnO中的氧空位和溅射工艺过程在Si—SiO_2界面引入的界面电荷是影响MZOS结构界面特性的主要因素.研究还表明,低温热退火可以改善MZOS结构的界面特性.
The C-V curves of MZOS structures and the Si-SiO2 subsystems are measured. Analysis on these curves shows that shortage of oxygen in the ZnO film and interface charges caused during the sputtering process are the main factors affecting the interface properties of the MZOS structures. It is also proved that annealing in oxygen atmosphere at a low temperature could improve the interface properties of MZOS structures.
出处
《压电与声光》
CSCD
北大核心
1993年第6期49-52,67,共5页
Piezoelectrics & Acoustooptics
