摘要
对10位CMOSADC7910在不同偏置条件下的电离辐射效应及退火特性进行了研究。结果表明:模数混合电路在不同偏置条件下的电离辐照响应有很大的差异。与加电偏置相比,零偏下0.25Gy/s(Si)剂量率辐照时的辐射损伤更严重。并对其损伤机理进行了初步探讨。
Radiation effects and room-temperature annealing behavior of CMOS analog to digital converters（ADC）irradiated by 60 Co γ-rays at various biased conditions were investigated.The results show that the response of the ADC is very different at different bias conditions.The worst irradiation bias condition is zero bias at 0.25Gy/s（Si） irradiation.Based on the analysis of the mechanism of CMOS ionizing radiation damage, possible sensitive parameters and mechanism for this response were discussed.
出处
《原子能科学技术》
EI
CAS
CSCD
北大核心
2010年第10期1252-1256,共5页
Atomic Energy Science and Technology
关键词
模数转换器
60Coγ辐照
室温退火
偏置条件
analog to digital converters
60 Co γ irradiation
room-temperature annealing
biased conditions
