摘要
对10位CMOS模数转换器ADC7910的^(60)Coγ射线的电离辐射效应及退火特性进行了研究。结果显示:模数混合电路在不同剂量率辐照下的电离辐照响应有明显区别,在高剂量率辐照下的损伤明显大于低剂量率的辐照,但这种差异可通过高剂量率辐照加与低剂量率辐照相同时间的室温退火来消除,因而具有时间相关效应。对辐射敏感参数和损伤机理进行了初步探讨。
Radiation effects and room-temperature annealing behavior of CMOS analog-to-digital converter （ADC） irradiated by ^60Coγ- rays were investigated.The results show that the response of the ADC is very different between low-and high-dose-rate irradiation.Ionizing radiation damage at high dose rate is more than that at low dose rate.But room-temperature annealing after high-dose-rate irradiation can remove the difference.It shows obviously time dependence effect.Based on the analysis of the mechanism of CMOS ionizing radiation damage,possible sensitive parameters and mechanism for this response are discussed.
出处
《核电子学与探测技术》
CAS
CSCD
北大核心
2011年第2期204-208,共5页
Nuclear Electronics & Detection Technology
关键词
模数转换器
辐射效应
室温退火
analog - digital converter
^60Coγradiation
room-temperature annealing
