摘要
对国产加固６４ＨＣ０４高速ＣＭＯＳ电路进行了不同剂量率的辐照响应和室温退火特性研究。探讨了５４ＨＣ０４电路在不同剂量率辐照下的损伤机理和失效模式的差异及其对高速ＣＭＯＳ电路在辐射环境中应用可靠性的影响。
High speed CMOS circuits 54HC04 were subjected to irradiations with the same total dose of 1×10Gy(Si) but at two different dose rates, and annealing measurements were performed at room temperature. The variance of both damage mechanism and failure mode for different dose rates was analysed, and the influence of dose rate on the reliability of high speed CMOS circuits in radiation environments Was disscussed.
出处
《核技术》
EI
CAS
CSCD
北大核心
1998年第8期503-506,共4页
Nuclear Techniques
