摘要
通过对NMOS和PMOS场效应晶体管在^60coγ射线下的辐照实验，研究辐照对不同宽长比（W／L）及不同偏置电压下的MOS管的阈值电压及其转移特性的影响。实验证明辐照使MOS管的阈值电压负向漂移，辐照时非零栅源电压引起的MOS管阈值电压漂移明显大于零栅源电压情况，宽长比对阈值电压漂移量影响不大。
Custom test chips including NMOS and PMOS devices were tested after irradiated by ^60coγ- ray . The threshold voltage shift induced by irradiation was studied based on the test results. Both NMOS and PMOS threshold voltages shifted negatively and the shifts were much lager when the device gates biased during irradiation than none biased. The difference of W/L showed no influence on the threshold voltage shift.
出处
《实验技术与管理》
CAS
2006年第3期38-40,共3页
Experimental Technology and Management
