摘要
利用恒流注入法和Ｉ－Ｖ测试方法研究了用于ｐＭＯＳ剂量计的国产ｐＭＯＳＲＡＤＦＥＴ的温度效应，结合ＭＯＳ晶体管阈值和电流－电压方程的理论公式推导分析了温度对阈电压、沟道载流子迁移率的影响，对“零温度系数点”从理论上进行了讨论，探讨了辐照对“零温度系数点”的影响。实验结果表明，采用“零温度系数”电流作为注入的恒流来测量栅源电压能提高剂量计电压读出的精度，起到对温度补偿的作用。
An investigation on temperature effect of the home-made pMOS RADFETs used in dosimeters has been carried out. Based on the theoretical formulas of MOS transistor threshold voltage and the I DS - V GS equation, the temperature effects on threshold voltage and channel carrier mobility are discussed. And the influence of irradiation on the “zero temperature coefficient(ZTC) point” is explored. The experimental results show that biasing a pMOS dosimeter at ZTC point (constant current) to measure the gate-source voltage can improve the read-out precision of the dosimeter and make compensation for the temperature effect.
出处
《核技术》
EI
CAS
CSCD
北大核心
1997年第3期173-178,共6页
Nuclear Techniques
关键词
PMOS
剂量计
温度效应
补偿
pMOS dosimeter, Temperature effect, Zero temperature coefficient(ZTC)point, Compensation
