摘要
基于铁电材料极化模拟的相场模型,结合半导体器件方程建立了金属-铁电-绝缘层-半导体结构铁电场效应晶体管(FeFET)性能研究的理论模型,利用蒙特卡方法模拟分析质子辐照产生的缺陷对FeFET性能的影响.计算结果表明,当入射角度为0,能量为10~100 KeV的质子入射FeFET时,FeFET中铁电层的矫顽场和剩余极化强度随质子辐射产生氧空位数密度的增加而减小,这是由于位移损伤会产生氧空位,氧空位产生缺陷偶极子,进而导致铁电层的畴结构发生变化,最终导致BaTiO_(3)薄膜的极化发生变化;随着入射质子能量的增加,质子诱导产生的氧空位数密度增大,FeFET的剩余极化强度、矫顽场的绝对值和存储窗口均减小,开态电流稍减小,关态电流增加.研究表明,辐射会导致FeFET器件性能发生退化.
Based on the phase field model of ferroelectric material polarization simulation and combined with the semiconductor device equations,a theoretical model for studying the performance of the ferroelectric field effect transistors(FeFET)with metal-ferroelectric-insulating layer-semiconductor(MFIS)structure is established.The influence of vacancy defects caused by proton irradiation on the FeFET is simulated and analyzed by Monte Carlo method.The calculation results show that the coercivity field and the residual polarization intensity of the ferroelectric layer in the MFIS decrease with the increase of the oxygen vacancy density generated by proton radiation at an incident angle of 0,and an energy of 10 keV to 100 keV,which is due to the oxygen vacancy produced by displacement damage and the defect dipole produced by oxygen vacancy.Then the domain structure of ferroelectric layer changes,and finally the polarization of BaTiO_(3) film changes.With the increase of incident proton energy,the oxygen vacancy density induced by proton increases,while the residual polarization intensity,the absolute value of coercive field,and the storage window of FeFET decrease.The on-state current decreases slightly,so the off-state current increase s.The study shows that the radiation will degrade the performance of FeFET devices.
作者
黄景
谭鹏飞
刘怡廷
李波
HUANG Jing;TAN Peng-fei;LIU Yi-ting;LI Bo(State Key Laboratory of Intense Pulsed Radiation Simulation and Effect,Xi’an 710024,China;School of Materials and Engineering,Xiangtan University,Xiangtan 411105,China)
出处
《现代应用物理》
2021年第4期121-127,共7页
Modern Applied Physics
基金
国家自然科学基金资助项目(61704127)
强脉冲辐射环境模拟与效应国家重点实验室专项资助项目(SKLIPR1816)。
