摘要
通过几组对比实验，揭示了聚酰亚胺、四甲基氢氧化胺对ＳｉＳｉＯ２界面的影响：聚酰亚胺在ＳｉＳｉＯ２界面上引入正电荷，四甲基氢氧化胺则在ＳｉＳｉＯ２界面上引入负电荷。
Through comparing several different experiments,the effect of polyimide and tetramethylammonium hydroxide to SiSiO2 interface is indicated. Polyimide can take positive charge into SiSiO2 interface, tetramethylammonium hydroxide can take negative charge into SiSiO2 interface. This conclusion is very important for the research of passivated thin film how to resist γ ray.
