摘要
利用MOCVD在InP衬底上制备InP/In0.53Ga0.47As/InP双异质结PIN型材料,通过对本征层In0.53Ga0.47As材料的光致荧光谱研究,发现PIN结构中两侧InP材料的掺杂特性对中间In0.53Ga0.47As材料的光致发光特性有明显的影响。本文通过对两侧InP材料的变掺杂处理,实现了In0.53Ga0.47As材料光致发光特性的有效提高。
InP/In0.53Ga0.47As/InP double heterojunction were grown by metalorganic chemical vapor deposition on InP substrate.Based on the intrinsic layer of In0.53Ga0.47As material photoluminescence spectrum measurement,that can be observed the doping characteristics of the InP layer in PIN structure had a significant impact on the PL spectrum properties of In0.53Ga0.47As layer.In this paper,the varied doping methods on both sides of the InP layer were suggested to improve the PL spectrum properties of In0.53Ga0.47As layer effectively.
出处
《红外技术》
CSCD
北大核心
2014年第5期415-418,共4页
Infrared Technology
基金
国家自然科学基金
编号:U1037602