摘要
分析了MBE生长的GaInNAs/GaAs单量子阱样品的光致荧光谱 (PL) ,细致地研究了在弱激发功率下GaInNAs/GaAs样品的发光峰位的S 型反常温度依赖关系。并对材料进行了退火处理 ,结果发现退火有效地改善材料的发光特性 ,并且会造成S 型的转变温度降低 ,从而说明退火可以有效地减少局域态。
Photoluminescence (PL) spectra of GaInNAs/GaAs single quantum well (SQW) before and after annealing were carefully studied in a range of temperatures. The anomalous S-shape temperature dependence of the PL peak was analyzed based on the competition and switching-over between the peaks related to N-induced localized states and the peak related to interband excitonic recombination. It is found the rapid thermal annealing (RTA) effectively reduces the localized energy and causes a decrease of the switching-over temperature.
出处
《稀有金属》
EI
CAS
CSCD
北大核心
2004年第3期582-584,共3页
Chinese Journal of Rare Metals
基金
国家自然科学基金项目资助 ( 60 2 760 0 3 )
