摘要
在多量子阱红外探测器外延材料制备中,由于器件响应波长对量子阱的阱宽和垒高变化敏感,因此对外延材料的制备有很高的要求。本文中我们利用光致荧光谱(PL)对GaAs/AlGaAs多量子阱红外探测器材料进行了测量和计算,从而在器件工艺前,快速确定器件的探测波长。以光致荧光光谱对GaAs/AlGaAs多量子阱红外探测器材料进行测试,通过理论计算,得到多量子阱红外探测器探测波长。计算得到的理论响应波长与实际器件的响应波长有良好的一致性,证明用光荧光谱对外延材料进行测量并计算,能够更加有效地开展器件研究工作。同时,我们在低温下测量了外加偏压下器件暗电流情况,以及液氮温度下,500K黑体辐射情况时,信号噪声比达到235.3。
It can be found that the response wavelength is sensitive for the material parameter of the device such as the wide of the well and the height of the barrier during QWIPs material fabrication. The QWIPs material fabrication looks forward to deeper studying on GaAs/A1GaAs growth and processing technology researches. In this paper, the photoluminescence （PL） scan can be performed on the material of GaAs/Al- GaAs multiple quantum well infrared photodetectors （QWIPs） before the process of device fabrication in order to estimate the response wavelength of device at a short time. With theoretical calculation, the peak response wavelength of the QWIP is determined. The calculated result is coincident with the one from photocurrent spectrum for the same sample very well. And it also can improve the development of studying effectively. It also gives the dark current under different bias voltage. The SNR is 235.3 with 500K blackbody radiance at 77K.
出处
《功能材料与器件学报》
CAS
CSCD
北大核心
2009年第2期185-188,共4页
Journal of Functional Materials and Devices
基金
国家973计划(No.2006CB604902)
国家自然科学基金(No.60506012)
国家863计划(No.2006AA03A121)
关键词
红外
QWIP
暗电流
光荧光谱
infrared
QWIP
dark current
photoluminescenee （PL）
