摘要
通过施加直流电压于P型SiOxNy 薄膜 ,使热电子注入到薄膜而引起薄膜电学参数的改变 .测试了薄膜在电子注入前后电学参数的变化 ,以研究薄膜的电子注入特性 ,探求薄膜的抗电子注入能力与制备工艺之间的关系 .结合俄歇电子能谱和红外光谱分析膜的微观结构 ,对薄膜的电子注入特性进行了理论分析与讨论 .
Direct voltage was applied to the P_type substrate SiO x N y film.The hot electrons were injected into the film and resulted in the changes of the electrical characteristic parameters. By testing the electrical characteristic changes before and after the injection, the electron injection characteristics were studied. The relation between the capacities of anti_injection and the fabricated conditions was found. The characteristics of the electron_injected film were analyzed and discussed, in terms of the microstructure analyses in the film with the Auger electron spectroscopy and the infrared spectrum.
出处
《华南理工大学学报（自然科学版）》
EI
CAS
CSCD
北大核心
2001年第2期31-34,共4页
Journal of South China University of Technology(Natural Science Edition)
基金
广东省自然科学基金资助项目! (95 0 186 )
