摘要
研究了等离子体增强化学气相淀积（PECVD）方法低温形成新型SIOxNy薄膜的界面特性。研究侧重于PECVDSiOxNy薄膜良好界面特性的控制，探索出界面特性与微观组份、衬底工作温度、反应室气压、退火致密、金属化后退火的相互关系。同时给出了获取界面等特性优良的PECVDSiOxNy薄膜的最优化工艺条件，并对实验结果进行了理论分析与讨论。
Interface characteristics of a new type SiOxNy thin film formed by low temperature Plasma Enhanced Chemical Vapour Deposition (PECVD) have been studied in this paper. Research work mainly emphasizes the control of the better interface characteristic of the PECVD SiOxNy thin film. The interrelations of the interface characteristic with the microscopical composition, the substrate temperature, the chamber pressure, the annealing densification and the post-metallization annealing, have been explored. The best processing condition to acquire better interface characteristics of the PECVD SiOxNy thin film is given. The theoreticalanalyses and discussions of these experimental results are also made in this paper.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1997年第2期158-164,共7页
Research & Progress of SSE
基金
国家自然科学基金
广东省自然科学基金
关键词
低温
介质膜
界面特性
PECVD
半导体薄膜
技术
Low Temperature
Plasma Enhanced Chemical Vapour Deposition
Dielectric Film
Interface Characteristic
