摘要
IGBT模块封装多层结构的热不匹配将产生热应力从而影响器件可靠性。给出了IGBT模块热应力模拟结果及减小硅芯片热应力的方法 ,并计算出模块封装最佳参数及热应力与温度的关系 。
Thermal mismatch in IGBT packaging,because of its multiplayer structure,will result in thermal stress,which affects the long term reliability of devices.This paper studies the theramal stress analyzing method and the way to reduce the stress developed in IGBT chips.The distributing values of thermal stress in IGBT packaging and the opetimal parameter of modules packaging for reducing chip's thermal stress are provided in this paper.Thermal cycling test results support the theoretical study results.
出处
《电力电子技术》
CSCD
北大核心
2000年第6期52-54,39,共4页
Power Electronics
基金
国家自然科学基金资助项目!(6 96 96 0 35 )
北京市自然科学基金资助项目!(4 982 0 0 6 )
