摘要
采用有限元方法建立了GaN基倒装LED芯片的三维热学模型,并对其温度分布进行模拟,比较了在不同凸点(焊点)分布、不同粘结层材料与厚度、不同蓝宝石衬底厚度及蓝宝石图形化下的倒装芯片温度分布,研究了粘结层空洞对倒装芯片热学特性的影响,并根据芯片传热模型对模拟结果进行了分析。
A three-dimensional thermal model was developed to help study the thermal properties of chip-level GaN-based flip-chip light-emitting diodes （LEDs） with finite-element method. The temperature distributions in different bump configurations, different thickness and materials of adhesive layer, different thicknesses of the sapphire substrate and different sapphire roughening surfaces were simulated and compared. Effect of adhesive cavity on thermal property of the flip-chip LEDs was studied. A heat transfer model was built to explain the results.
出处
《光电子技术》
CAS
北大核心
2012年第2期113-118,共6页
Optoelectronic Technology
基金
重庆市自然科学基金资助项目(cstc2011jjA0126)
关键词
GaN基倒装LED芯片
温度分布
有限元数值模拟
凸点分布
蓝宝石图形化
GaN-based flip-chip LEDs
temperature distribution
finite-element method nu-merical simulation
bump configurations
sapphire surface roughening
