摘要
光电双基区晶体管(PDUBAT)是一种能产生‘N’型光电负阻特性的新型光电负阻器件。通过对试制出的样管进行测试,发现PDUBAT在无外接电感的情况下即可发生脉冲振荡。脉冲振荡的频率和振幅均受到入射光强度的调制,即随光强的增大,振荡频率增加,振幅减小。最后,对该器件的应用及发展前景进行了讨论。
Photoelectronic DUal BAse Transistor(PDUBAT)is a novel photoelectronic negative resistance device,which has the characteristics of ‘N’ type negative resistance.Experimental investigations are made into fabricated sample devices in the paper.It is found that PDUBAT can operate as a pulse oscillator without the external load of inductors,whose frequency and magnitude are modulated by the intensity of the input light.Finally,applications and prospects of the development of PDUBATs are discussed.
出处
《微电子学》
CAS
CSCD
北大核心
2000年第1期11-13,16,共4页
Microelectronics
基金
光电子集成联合实验室
中科院半导体所实验区开放课题资助项目
天津市自然科学基金资助项目! ( 983 60 14 11)
关键词
双基区晶体管
光电负阻器件
光控脉冲振荡器
Photoelectronic dual base transistor
Photoelectronic negative resistance device
Light controlled pulse oscillator
