摘要
系统地报道和探讨了在研究间接耦合光电探测结构光致负阻特性中所发现的一系列实验现象．在对这些实验现象综合分析的基础之上，提出了一种由一横向ＰＮＰＮ四重结构与一纵向ＮＰＮ管相互作用所产生的负阻效应的新模型．利用负阻峰域载流子特殊的输运机制，设计和研制出了上升、下降时间均为２ｎｓ左右，内部电流增益大于３０倍的硅光电探测单元器件．
In this paper, A series of the experimental results of indirect coupling Photodetecting Structure are reported and studied. Based upon these preliminary analysises, A basic photo-negative resistance physical model is proposed for the first time which is attributed to the interaction of a lateral PNPN four-fold structure and a vertical NPN bipolar transistor. And the, according to the special carrier transport characteristics in peak region, a new silicon device which both the rise time and the fall time are about 2ns, the current gain is greater than 30 has been designed and fabricated.
出处
《武汉大学学报（自然科学版）》
CSCD
1994年第3期55-60,共6页
Journal of Wuhan University(Natural Science Edition)
基金
国家"863"计划
国家高技术自然科学基金
电子科学院基金
关键词
光致负阻
间接耦合
光电探测器件
indirect coupling photodetecting structure, photo-negative resistance, PNPN fourfold structure
