摘要
在重点考虑了提高击穿电压和增大电流容量的基础上，设计并研制出功率型ＤＵＢＡＴ。其主要参数达到：ＢＶ（ＣＥ０）≥１２０Ｖ，Ｉ（ＣＭ）≥２Ａ，ＲＮ≈５０～１１０Ω，Ｐ（ＣＭ）≥１０Ｗ。并在此器件上首次发现了电压（流）控制调节脉冲频率效应。
The power dual base transistor (DUBAT) has been designed and fabricated by increasing the breakdown voltage and current capacity of the device.The parameters of BV(CE0)≥120 V,I(CM)≥2 A, RN≈50￣110 Ω,and P(CM)≥10 W have been obtained. In addition,from this device,we find the voltage (current )controlled frequency modulation for the first time.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1994年第4期310-316,共7页
Research & Progress of SSE
基金
天津市科委资助
关键词
双基区晶体管
负阻器件
电压控制
电流控制
调频
Three Terminals Negative Resistance Device, Integrated Negative Resistance Device, Voltage (Current)Controlled Frequency Modulation
