摘要
采用美国Analysis Tech公司生产的Phase11型热阻测试仪,以表征热问题的关键参数热阻为基础,分别对采用不同粘结材料和封装基板的LED进行了测试,并通过结构函数对LED传热路径上的热结构特性进行了分析.结果表明,GaN陶瓷封装基板、MCPCB板以及塑料PCB板的LED总体热阻分别为8.95、10.66和22.48℃/W;采用Sn20Au80和银胶芯片粘接的LED,芯片到Cu热沉的热阻分别为3.75和4.80℃/W.因此对于大功率LED封装,可在结构函数的指导下选择材料,实现降低热阻,提高LED寿命和稳定性的目标.
In this paper,based on the key parameter thermal resistance,we use Analysis Tech company＇s Phase11 thermal analyzer to study different dies attach and heat sink materials for high power LED. By using the evaluation of structure function,we analyze the thermal structure characteristic. The thermal resistance from chip to board for GaN ceramic,MCPCB and PCB heat sink is 8.95,10.66,and 22.48 ℃/W,respectively. And the thermal resistance from chip to Cu heat slug for eutectic and Ag grease is 3.75 and 4.80 ℃/W,respectively. The results show that under the instruction of structure function,it is possible to fabricate high power LED with small thermal resistance,long durability and stability by applying appropriate new materials.
出处
《材料研究与应用》
CAS
2010年第4期338-342,共5页
Materials Research and Application
关键词
大功率LED
热阻
结构函数
high power LED
thermal resistance
structure function
