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IGBT热阻测量方法的综述 被引量:6

Review of IGBT thermal resistance measurement method
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摘要 通过对近年来国内外IGBT热阻测量技术进行分析,根据各方法测量原理不同归类为四种方法:热敏参数法、数学物理法、实测结温法、红外扫描法。描述了近年来热阻测量的不断改进之处,并总结了各测量方法的优缺点。最后分析了热阻测量的发展趋势和所需解决的关键问题。 The thermal resistance measuring methods of IGBT are analyzed which published in domestic and abroad in recent years. According to the measuring principle, methods are classified into four: thermal sensitive parameters method, mathematical physics method, the directly measure junction temperature method and the infrared scanning method. The continuous improvements of the thermal resistance measurements in recent years are described, as well as their advantages and disadvantages. At last, the trends of measurement and the key issues which should be solved are pointed out.
出处 《电子元件与材料》 CAS CSCD 2015年第9期25-30,共6页 Electronic Components And Materials
基金 国家自然科学基金资助(No.51377044) 河北省科技支撑计划资助项目(No.13214303D No.14214503D)
关键词 IGBT 热阻 综述 结温 温度测量 对比分析 IGBT thermal resistance review junction temperature temperature measurement comparative analysis
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  • 1王兆安, 黄俊..电力电子技术[M],2000.
  • 2金锐,于坤山,张朋,刘先正,何维国,刘隽.IGBT器件的发展现状以及在智能电网中的应用[J].智能电网,2013,1(2):11-16. 被引量:24
  • 3MASANA F N. A new approach to dynamic thermal modeling of semiconductor packages [J]. Microelectro Reliab, 2001, 41: 901-912. 被引量:1
  • 4ZHAO L. A thermal model for IGBT modules and its implementation in a real time simulator [D]. Pittsburgh: University of Pittsburgh, 2002. 被引量:1
  • 5SCHWEITZER D. A method to adapt Zth-junction-to-ambient eurves to varying ambient conditions [(2]// IEEE Trans, 28th Annual Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM), San Jose, CA. New York: IEEE, 2012: 205-211. 被引量:1
  • 6陈君,张小玲,谢雪松,田蕴杰,袁芳,杨友才.一种IGBT热阻测试系统的研制[J].半导体技术,2015,40(1):68-72. 被引量:6
  • 7陈明,汪波,唐勇.IGBT动态热阻抗曲线提取实验研究[J].电力电子技术,2010,44(9):101-103. 被引量:16
  • 8HEWLETT E A guide to understanding, measuring, and applying power FET thermal resistance coefficients [G]. High-Frequency Transistor Primer Part IIIA: Thermal Resistance. 被引量:1
  • 9Palo Alto, USA: Hewlett-Packard, 1998. BLACKBURN D L. Temperature measurements of semiconductors devices-a review [C]// Semiconductor Thermal Measurement and Management Symposium. New York: IEEE, 2004: 70-80. 被引量:1
  • 10CHEN M. Test of IGBTjunction-case steady state thermal resistance and experimental analysis [C]//2010 International Conference on Intelligent System Design and Engineering Application (ISDEA), Oct 13-14, 2010, Changsha, China. New York: IEEE, 2010: 557-560. 被引量:1

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