摘要
A thin TiO2 layer inserted in a phase change memory （PCM） cell to form a deep sub-micro bottom electrode （DBE） is proposed and its electro-thermal characteristics are investigated with the three-dimensional finite element analysis. Compared with the conventional PCM cell with a SiN stop layer, the reset threshold current of the PCM cell with the TiO2 layer is reduced from 1.8 mA to 1.2 mA and the ratio of the amorphous resistance and crystalline resistive increases from 65 to 100. The optimum thickness of the TiO2 layer and the optimum height of DBE are 10nm and 200nm, respectively. Therefore, the PCM cell with the TiO2 layer can decrease the programming power consumption and increase heating efficiency. The TiO2 film is a better candidate for the SiN film in the PCM cell structure to prepare DBE and to reduce programming power in the reset operation.
A thin TiO2 layer inserted in a phase change memory （PCM） cell to form a deep sub-micro bottom electrode （DBE） is proposed and its electro-thermal characteristics are investigated with the three-dimensional finite element analysis. Compared with the conventional PCM cell with a SiN stop layer, the reset threshold current of the PCM cell with the TiO2 layer is reduced from 1.8 mA to 1.2 mA and the ratio of the amorphous resistance and crystalline resistive increases from 65 to 100. The optimum thickness of the TiO2 layer and the optimum height of DBE are 10nm and 200nm, respectively. Therefore, the PCM cell with the TiO2 layer can decrease the programming power consumption and increase heating efficiency. The TiO2 film is a better candidate for the SiN film in the PCM cell structure to prepare DBE and to reduce programming power in the reset operation.
基金
Supported by the National Basic Research Program of China （2007CB935400 and 2006CB302700）, the National High Technology Research and Development Program of China （2008AA031402）, Science and Technology Council of Shanghai （0752nm013, 07QA14065, 07SA08, 08DZ2200700, 08JC1421700）, the National Nature Science Foundation of China （60776058）, and Chinese Academy of Sciences （083YQA1001）
