摘要
以NH3和SiH4为反应源气体，采用射频等离子体增强化学气相沉积（RF-PECVD）法在多晶硅（P-Si）衬底上沉积了一系列SiN薄膜并进行了相关性能测试。系统地分析讨论了反应源气体流量比和反应压强对siN薄膜介电常数、电学性能及界面特性的影响，在制备高质量的P-Si TFT栅绝缘层用SiN薄膜方面具有重要的参考价值。
Radio frequency plasma-enhanced chemical-vapor deposited silicon niWide films on p-Si wafers were prepared by the reaction of NH3 and SiH4 and measured. The influences of reactant gas ration and reaction pressure on dielectric constant, electronic properties and surface properties were systematically discussed, which is beneficial to preparing high property silicon nitride film as gate insulator layer for p-Si Thin Film Transistor.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2007年第A01期25-28,共4页
Journal of Functional Materials
基金
基金项目：电子科技大学青年基金资助项目（YF020503）
关键词
PECVD
SiN薄膜
反应源气体流量比
反应压强
plasma-enhanced chemical-vapor depositionl silicon nitride filml reactant gas rationl reaction pressure
