摘要
从求解异质结双极晶体管基区的二维电流连续性方程出发，推导出了基区少数载流子浓度的解析解，由此获得了基区各种复合电流的解析表达式。基于该模型完成了算法研究和软件编制，计算出了器件所能达到的理论电流增益。
An analytical solution for the minority carrier concentration to the two dimension diffusion equation is derived.Analytical modelings of the base recombination currents of heterojunction bipolar transistors are established.The calculation method and computer program have been carried out.The relations of the different components of base current to the device geometry are calculated.The theoretical current gain of HBTs has been reached.
出处
《半导体情报》
1998年第5期55-59,共5页
Semiconductor Information
基金
国防基金
