摘要
采用解析的方法计算了少数载流子浓度与Ge组分x、温度T以及掺杂浓度N的关系。发现常温时,在同一掺杂浓度下,少子浓度随Ge组分的增加而增大,其增加的速度越来越快;在同一Ge组分下,少子浓度随掺杂浓度的增加而减少,其减少的速度越来越慢。低温下,在考虑杂质不完全电离的同时,对由非简并情形向简并情形过渡的杂质电离出来的空穴浓度进行了修正,发现在同一Ge组分下,少子浓度随掺杂浓度的增加而增大,其增加的速度变得越来越快。同一掺杂浓度下,少子浓度随Ge组分的增加而增大,其增加的速度,轻掺杂时增加的较慢,重掺杂时增加得越来越快。
In this paper the minority carrier concentration is calculated analytically with the varying of the temperature T,Ge fraction x and doping concentration.It is found that for the given doping concentration,the minority carrier concentration increases more and more quickly with the increasing of Ge fraction x.For the given Ge fraction x,the minority carrier concentration increases more and more slowly with the increasing of doping concentration at 300 K.At low temperature,the hole concentration induced by ion...
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2008年第1期8-11,共4页
Research & Progress of SSE
关键词
硅锗合金
少数载流子浓度
低温特性
掺杂浓度
SiGe alloy
minority carrier concentration
low temperature characteristics
impurity concentration
