摘要
脉冲激光沉积技术(PLD)易于获得高质量的氧化物薄膜已成为一种重要的制备ZnO薄膜的技术。采用脉冲激光沉积(PLD)(KrF准分子激光器:波长248nm,频率5Hz,脉冲宽度20ns)方法在氧气气氛中以高纯Zn(99.999%)为靶材、在单晶硅和石英衬底表面成功生长了ZnO薄膜。通过X射线衍射仪、表面轮廓仪、荧光光谱仪、紫外可见分光光度计对合成薄膜材料的晶体结构、厚度、光学性质等进行了研究,分析了激光能量变化对其性能的影响。实验结果表明我们使用PLD法可以制备出(002)结晶取向和透过率高于75%的ZnO薄膜,激光能量为450mJ的ZnO薄膜的发射性能较好,但激光能量的增加不能改善薄膜的透光率。
Pulsed laser deposition method became a hotpoint in all kinds of preparing ZnO films methods on account of tending to getting oxide films of high quality. With high pure Zn as a target, ZnO films on single crystal silicon （Si） and quartz wafers have been fabricated by pulsed laser deposition method （PLD）（KrF excimer laser：wavelength 248 nm,pulse frequency 5 Hz,pulse duration 20 ns） at 02 atmosphere. The crystal structures,thicknesses and optical properties of ZnO films have been studied by X-ray Diffraction,Sruface Profile, Photolumineseence Spectra and Ultraviolet-Visible Spectrophotometry, and the characterization inflection of ZnO films by laser energy has been given. It is obvious that the crystal structures of ZnO films we prepared was （002） high structural perfection and the transmittance of our samples was more than 75%. Luminescence capability was better than others when laser energy was 450 mJ, but it couldn＇t improve luminescence capability of ZnO films by enhancing laser energy.
出处
《电子器件》
CAS
2009年第4期725-728,共4页
Chinese Journal of Electron Devices
基金
国家自然科学基金资助(10674133
10604041)
广东省自然科学基金资助
深圳市产学研科技合作资助(Y2005002)
深圳市科技计划资助(200604
200706)
深圳市南山区科技研发资金资助项目(南科院2008012)
