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等离子体技术制备氧化硅阻隔层薄膜的研究 被引量:6

Preparation of SiO_x Barrier Coatings by Plasma Deposition
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摘要 采用无任何污染的等离子体技术,进行SiOx薄膜的沉积:电子束蒸发氧化硅、离子源辅助电子束蒸发氧化硅、磁控溅射沉积氧化硅、离子源辅助磁控溅射沉积氧化硅、等离子体化学气相沉积SiOx等,并对所沉积的薄膜进行结构性能的比较研究。 SiOx coatings on plastic surface for gas and humid barrier purpose were deposited by plasmas. In order to evaluate the plasma technologies, several methods were carried out, such as electron beam (EB) evaporation, ionic enhanced EB evaporation, magnetron'sputtering, and ionic enhanced magnetron sputtering , as well as plasma enhanced chemical vapor deposition (PECVD). It is fund that each source showed its advantage and disadvantage, but PECVD demonstrated a better WVTR and OTR values than others. The possible reason was explained.
出处 《包装工程》 CAS CSCD 北大核心 2008年第10期8-11,14,共5页 Packaging Engineering
基金 国家自然科学基金(1775017) 北京市人才强校拔尖人才计划(PHR(IHLB))资助
关键词 等离子体技术 SIOX薄膜 高阻隔包装 plasma technologies SiOx coating high barrier packaging
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