摘要
导体微缺陷的存在会导致局部电场畸变,产生的微放电严重影响输电设备的绝缘安全。探索了一种使用等离子体表面改性技术,通过在导体表面沉积薄膜来抑制局部微放电的方法。利用高频高压电源激励的大气压低温等离子体射流对金属Cu表面进行改性,使用四氯化钛作为钛源在Cu表面进行化学气相沉积TiO_2薄膜。探讨了改性过程中空气的加入和基板温度对放电特性及沉积薄膜质量的影响。实验结果表明,加入空气后,正半周期放电电流从一个脉冲变为两个脉冲,且电流幅值变小;通入40sccm空气,且基底加热至100℃为最优处理条件,此时沉积得到的薄膜Ti元素和O元素含量最高,分别为18.6%和43.5%,薄膜表面微观结构更均匀,结合更紧密,沉积2min时,薄膜厚度达到349 nm。薄膜功函数测试表明,沉积后Cu表面功函数有所提升,从未处理的4.65eV,提高至平均4.87eV。缺陷处电场分布模拟实验结果显示,沉积薄膜后,缺陷处的最大场强由未处理时的1.4×10~6 V/m降为9.89×10~5 V/m,对电场畸变情况有一定的改善作用。
The presence of conductor micro-defects may distort the local electric field and cause micro discharge, which seriously affects the insulation safety of the transmission equipment. In this paper, we presented a method for suppressing local micro discharges by plasma deposited films on the conductor surface. The surface of Cu was modified by atmospheric pressure plasma jet excited by AC power supply. TiO_2 film was deposited on Cu surface by plasma enhanced chemical vapor deposition using TiCl_4 as titanium precursor. The effects of air addition and substrate temperature on the discharge characteristics and the qualities of the deposited films were also discussed. The results show that two current pulse appear during positive half voltage period after air addition, and the current amplitude become smaller. The optimal treatment condition is obtained with substrate heating to 100℃and air gas flow rate of 40 sccm. And in this case, Ti element and O element reached the highest intensity of 18.6% and 43.5% respectively. Furthermore, the film surface microstructure is more uniform and the bonding was more densely. The thickness of film is 349 nm after 2 minutes deposition. The film work function test shows that compared with the untreated Cu, the surface work function after deposition has been improved from 4.65 eV to 4.87 eV. The distribution of the electric field simulation results show that after deposition of film, the maximum field strength at the defect is reduced from 1.4×10~6 V/m to 9.89×10~5 V/m, which has a certain positive effect on the electric field distortion.
作者
崔超超
章程
任成燕
高远
陈根永
邵涛
CUI Chaochao1, ZHANG Cheng2, REN Chengyan2, GAO Yuan2, CHEN Genyong1, SHAO Tao2(1. Department of Electrical Engineering, Zhengzhou University, Zhengzhou 450001, Henan Province, China; 2. Key Laboratory of Power Electronics and Electric Drive （Institute of Electrical Engineering, Chinese Academy of Sciences）, Haidian District, Beijing 100190, China)
出处
《中国电机工程学报》
EI
CSCD
北大核心
2018年第5期1553-1561,共9页
Proceedings of the CSEE
基金
国家自然科学基金项目(11575194)
国家重点基础研究发展计划项目(973项目)(2014CB239505-3)~~
