摘要
在射频等离子体放电条件下,以六甲基二硅氧烷(Hexamethyldisilone,HMDSO)为单体,氧气为反应气体,在PET薄膜及载玻片上聚合SiOx薄膜。通过红外光谱(FTIR)分析了工作压强、功率、单体氧气比、聚合时间等对聚合薄膜的结构和沉积速度的影响;通过扫描电子显微镜(SEM)观察了薄膜的表面形貌;通过表面轮廓仪测试了薄膜厚度,计算了沉积速率并对薄膜的均匀性做了研究。在38℃恒温水浴箱中进行的水蒸汽阻隔实验表明,PET薄膜的阻隔性能得到有效的提高。
Silicon oxide films were grown by RF plasma enhanced chemical vapor deposition （PE-CVD） on polyethylene terephthalate （PET） and glass substrates. The films were characterized with scanning electron microscopy （SEM） and Fourier transform infrared spectroscopy （FIIR） to optimize its growth conditions, including working gas pressure, discharge power, monomer ratio and exposure time. Its humid barrier characteristics were also evaluated in water vapor, of 38℃. The results show that the SiOx film strongly improves the humid barrier of PET.
出处
《真空科学与技术学报》
EI
CAS
CSCD
北大核心
2006年第6期482-486,共5页
Chinese Journal of Vacuum Science and Technology
