摘要
本文介绍的正电子深能级瞬态谱（PDLTS）技术是结合了对固体缺陷有很高灵敏度的正电子湮没谱（PAS）和一些深能级瞬态谱（DLTS）技术而成新的实验方法．该技术能用来研究Ⅲ～Ⅴ，Ⅱ～Ⅵ族等半导体材料的缺陷特征，它的优点不仅能研究半导体材料中缺陷的电学特征而且还能够同时揭示这些电活性缺陷的微观结构信息．本文将介绍砷化镓中EL2缺陷能级的PDLTS研究，运用该技术并结合深能级Arrhenius分析，得到EL2能级值为0．82±0．02eV．
A new positron deep level transient spectroscopy （PDLTS） technique, which is the combination of positron annihilation spectroscopy（PAS）and some DLTS techniques, was introduced. The PDLTS technique could be used to study defect characterization of Ⅲ-Ⅴ and Ⅱ- Ⅵgroup semiconductors. The promising advantage of this method over the conventional DLTS is that it could not only investigate electrical character of defects in semiconductor but also reveal microstructure information of these defects. In this work, EL2 defect level transient study in GaAs was introduced and the EL2 level value of 0.82 ± 0.02 eV was obtained by a standard Arrhenius analysis, similar to that in conventional DLTS studies.
出处
《四川大学学报（自然科学版）》
CAS
CSCD
北大核心
2008年第3期586-590,共5页
Journal of Sichuan University(Natural Science Edition)
基金
国家自然科学基金(10775102)
