摘要
使用正电子湮没寿命谱和正电子寿命-动量关联谱对水蒸气和真空条件下退火的多孔硅样品的微观缺陷结构进行表征,结合发射光谱测量结果,对影响多孔硅发光性能的因素进行了讨论.实验结果表明,水蒸气退火后样品孔壁表面的悬挂键减少,并出现新的E′γ和EX类缺陷.水蒸气退火后样品中两种缺陷数量发生变化是导致多孔硅样品发光增强的直接原因;真空退火未使样品中发光相关缺陷发生变化,样品的发光性能没有显著改变.
Porous silicon（PS） treated by water vapor annealing and vacuum annealing has been studied by positron annihilation lifetime spectroscopy and age-momentum correlation measurement.It is found that after water vapor annealing,nonradiative defects are reduced and defects dominating light source appear.These two types of defects change the lifetime and the S parameter of the positron annihilation and cause a drastic enhancement in the photoluminescence（PL） efficiency.Defects that cause the PL of PS show no obvious change after annealing at 300 ℃ in vacuum,therefore the PL of the sample is not influenced.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2010年第12期8915-8919,共5页
Acta Physica Sinica
基金
国家自然科学基金(批准号:10835006,10705031)资助的课题~~
关键词
多孔硅
光致发光
正电子湮没谱
porous silicon
photoluminescence
positron annihilation spectroscopy
