摘要
采用 Ga As作为衬底研究了 Hg Cd Te MBE薄膜的表面缺陷 .借助 SEM分析了不同缺陷的成核机制 ,确定了获得良好表面形貌所需的最佳生长条件 .发现 Hg Cd Te外延生长条件、衬底表面处理等因素与外延层表面各种缺陷有关 .获得的外延层表面缺陷 (尺寸大于 2 μm)平均密度为 30 0 cm- 2 ,筛选合格率为 6 5 % .
The surface defects on MBE-grown HgCdTe films on GaAs substrates were studied. The mechanism of surface defect formation was analyzed by SEM observations. The optimal growth conditions for obtaining a good morphological surface were determined. It was found that a variety of surface defects an epilayers are related to the HgCdTe growth conditions and the substrate surface treatment. The average density of surface defects (larger than 2 mum) for HgCdTe epilayers was obtained to be 300 cm(-2), and the yield was 65%.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
2001年第6期406-410,共5页
Journal of Infrared and Millimeter Waves
基金
国家自然科学基金 (编号 6 942 5 0 0 2 )~~
