摘要
近年来,HgCdTe材料在红外领域的应用得到了长足的发展,并成为继Si和GaAs以后最为重要的半导体材料之一。在发展过程中,由最初的采用体材料直接制作器件,发展到目前利用薄膜技术来制作器件,并通过灵活运用各种薄膜的制备和掺杂技术,采用不同的器件结构,使器件的性能取得了极大的提高。由单元到多元到焦平面,由单色到双色,由低温到高温,由短波波段到长波波段,HgCdTe红外探测器已发展成为了种类最齐全,应用最广泛的一类红外探测器。
It is more than forty years since it was reported first, the application of HgCdTe in the field of the infrared has made great progress, and it becomes one of the most important semiconductor in the world. At first, the HgCdTe infrared detector was manufactured by the block material, then became the thin film, adopt different thin film technology and detector structures, the performance of the detector has been greatly improved. Now it covers all over the three bands in infrared ray and becomes the most widely used infrared detector.
出处
《实验科学与技术》
2006年第4期106-109,共4页
Experiment Science and Technology
