摘要
研究了多晶金红石ＴｉＯ２氧敏半导体材料的氧敏特性及其机制。结果表明，表征ＴｉＯ２导电机制的特性参数ｍ并非常数，它与杂质浓度、温度、氧分压等多种因素有关。本文认为，ＴｉＯ２的主要点缺陷由不同电离状态的氧空位所构成，该模型可以解释有关的实验结果。
This paper reports experimental results on the oxygen sensing of poly crystalline rutile. Experimental results showed that the parameter m in oxygen partial pressure dependence of electical conductivity for the rutile is related to the temperature. A random point defect model was established in this paper for a general case. The model was used to explain our and other experimental results, and the model aslo predicts that the parameter m is related to the concentration of impurity, and the oxygen partial pressure.
出处
《华东理工大学学报（自然科学版）》
CAS
CSCD
北大核心
1997年第4期462-466,共5页
Journal of East China University of Science and Technology
关键词
金红石
电导率
半导体
二氧化钛
氧敏特性
rutile
conductivity
crystal defects
oxygen sensitive resistors
