摘要
报道在晶格失配GaAs衬底上分子束外延CdTe缓冲层和中波HgCdTe薄膜的温度控制过程。通过红外测温仪监测样品表面温度,来改变加热功率,从而把温度控制在需要的生长温度范围。通过此方法,可以把CdTe生长时样品的表面温度控制在±5℃,MCT生长时可以达到±1℃。生长得到的样品,表面光亮,组分、厚度均匀性好,X射线双晶回摆曲线半峰宽为72 arcsec。
The temperature control process of CdTe and MW HgCdTe layers grown on （211）GaAs substrate by MBE was investigated in this paper. The growth temperature was minotored by a pyrometer and can be controlled by changing the thermal power. By this method, the CdTe and MW HgCdTe growth temperature were precisely controlled within ± 5℃ and ± 1℃, respectively. High quality films which showed good uniformity of composition and thickness in a 2-inch wafer were obtained. The FWHM of X-ray double crystal rotating curve on a sample reached to 72 arcsecs.
出处
《红外技术》
CSCD
北大核心
2007年第2期76-78,82,共4页
Infrared Technology
基金
国家自然科学基金资助项目(60576069)
云南省自然基金资助项目(2004E0055M)
