摘要
在分子束外延(MBE)中波HgCdTe薄膜过程中,利用反射式高能电子衍射(RHEED)对衬底表面脱氧和生长过程中生长参数对材料特性的影响进行研究。通过观察RHEED图样的变化,确定了衬底的脱氧状况,获得了生长中衬底温度等生长参数变化引起材料结晶的变化规律,为MBE生长HgCdTe薄膜实验的可控生长提供有效帮助;生长结束后,通过SEM、Hall等手段对HgCdTe的表面缺陷、电学参数等性能进行了初步研究,证明实验说成长的材料基本满足器件制备的要求。
Reflection high energy electron diffraction （RHEED） is a useful tool to observe and analyze the deoxydation and substrate temperature variation in the MBE growth of Hgl-xCdxTe （MCT） films. In this paper, we have investigated the substrate deoxydation process and the influence of substrate temperature variation on the MCT film crystalline by the RHEED technique and obtained the optimum growth window for the middle wavelength MCT film. The analysis of RHEED pattern will give the benefit for the controlling of MBE growth of MCT; The characteristics of MCT films which grown in the end of the experiment, such as crystal quality, electrical performance, were studied by SEM, Hall. The MBE grown MCT films can be primarily suitable for requirement of FPAs fabrication.
出处
《红外技术》
CSCD
北大核心
2008年第12期688-692,共5页
Infrared Technology
