摘要
采用金属有机化合物气相沉积(MOCVD)两步生长法在自持化学气相沉积(CVD)金刚石厚膜的成核面上制备ZnO薄膜,并研究了薄膜的生长特性和电学特性.结果表明,在基片温度为600℃时沉积得到的ZnO薄膜表面均匀,取向较一致,为c轴取向生长.其载流子迁移率为3.79 cm2/(V.s).
ZnO thin films were prepared on the smooth nucleation surfaces of freestanding CVD thick diamond films by metal organic chemical vapor deposition （MOCVD） with two-step growth method. The growth and electrical properties of the ZnO films are characterized experimentally. The ZnO film deposited at a substrate temperature of 600 ℃ exhibited a clean surface with c-preferred orientation and had a mobility of 3.79 cm^2/（ V · s）.
出处
《吉林大学学报（理学版）》
CAS
CSCD
北大核心
2007年第5期822-826,共5页
Journal of Jilin University:Science Edition
基金
国家自然科学基金(批准号:60307002)
