摘要
采用磁控溅射在自持CVD金刚石厚膜的成核面上制备了ZnO薄膜,并实验研究了其生长特性和发光特性随温度的变化情况。利用X射线衍射(XRD)仪,光致发光(PL)谱,电子探针(EPMA)和霍尔测量系统对样品进行了检测。SEM结果表明,基片温度为600℃时ZnO薄膜表面粗糙度最低。而PL谱表明基片温度为750℃时ZnO薄膜具有最优的光学性能,此时由EPMA测得的薄膜中Zn/O成分比接近ZnO的化学计量比。霍尔测量表明,样品均呈现出高阻状态,满足声表面波滤波器的制备条件。
ZnO thin films were prepared on the smooth nucleation surfaces of freestanding CVD thick diamond films by reactive radio-frequency magnetron sputtering. With the increase of the substrate temperature, the growth and optical properties of the ZnO films were characterized experimentally by X-ray diffraction, room temperature photoluminescence spectra, and electron probe microanalysis（EPMA） and Hall measurements. The SEM results indicate that the ZnO film at the substrate temperature of 600℃ is of the lowest roughness. The PL spectrum shows that the sample at the substrate temperature of 750 ℃ has the best optical property, which is near the stoiehiometry of ZnO characterized by EPMA. The Hall effect measurement shows that the samples have high resistivity, which can meet the requirements of SAW devices.
出处
《半导体光电》
EI
CAS
CSCD
北大核心
2008年第6期884-887,892,共5页
Semiconductor Optoelectronics
